Low temperature atomic layer deposition of cobalt using dicobalt hexacarbonyl-1-heptyne as precursor

• Mathias Franz,
• Mahnaz Safian Jouzdani,
• Lysann Kaßner,
• Marcus Daniel,
• Frank Stahr and
• Stefan E. Schulz

Beilstein J. Nanotechnol. 2023, 14, 951–963, doi:10.3762/bjnano.14.78

• defined by the onset of the decomposition of the precursor. In our case, decomposition occurs at temperatures of 125 °C and above, resulting in a film growth in chemical vapour deposition mode. The lower limit of the ALD window is around 35 °C, where the reduction of the precursor is incomplete. The

• decomposition of one of the precursors. In this case, the process is within the regime of chemical vapour deposition (CVD), resulting in a continuous film growth. It is therefore essential to carry out the ALD process in a way that the first precursor only reacts with the second precursor during the second half

Bismuth-based nanostructured photocatalysts for the remediation of antibiotics and organic dyes

• Akeem Adeyemi Oladipo and
• Faisal Suleiman Mustafa

Beilstein J. Nanotechnol. 2023, 14, 291–321, doi:10.3762/bjnano.14.26

• techniques have been developed to synthesise 3-D Bi-based nanostructures with different morphologies, including solvothermal/hydrothermal and sol–gel processes, mechanical exfoliation, solid-state reactions, chemical vapour deposition, and microwave-assisted techniques [106]. These 3-D photocatalysts have

Effects of focused electron beam irradiation parameters on direct nanostructure formation on Ag surfaces

• Jānis Sniķeris,
• Vjačeslavs Gerbreders,
• Andrejs Bulanovs and
• Ēriks Sļedevskis

Beilstein J. Nanotechnol. 2022, 13, 1004–1010, doi:10.3762/bjnano.13.87

• nanophotonics [3]. They can also serve as catalysts for controlled chemical vapour deposition [4]. While gold is the most widely used material for fabrication of plasmonic nanostructures, silver can offer a less expensive alternative [5][6][7]. Electron beam (EB) lithography is a popular method for the

Zinc oxide nanostructures for fluorescence and Raman signal enhancement: a review

• Ioana Marica,
• Fran Nekvapil,
• Maria Ștefan,
• Cosmin Farcău and
• Alexandra Falamaș

Beilstein J. Nanotechnol. 2022, 13, 472–490, doi:10.3762/bjnano.13.40

• morphology for SERS measurements can be fabricated using various methods, including sol–gel synthesis [38], thermal deposition [31][32], chemical vapour deposition [42], or electrodeposition [35], which resulted in 1.2 μm high, vertically aligned nanorods of 60 nm diameter. It was observed that thermal

Properties of graphene deposited on GaN nanowires: influence of nanowire roughness, self-induced nanogating and defects

• Jakub Kierdaszuk,
• Piotr Kaźmierczak,
• Justyna Grzonka,
• Aleksandra Krajewska,
• Aleksandra Przewłoka,
• Wawrzyniec Kaszub,
• Zbigniew R. Zytkiewicz,
• Marta Sobanska,
• Maria Kamińska,
• Andrzej Wysmołek and
• Aneta Drabińska

Beilstein J. Nanotechnol. 2021, 12, 566–577, doi:10.3762/bjnano.12.47

• a separate analysis of graphene strain, carrier concentration, and defects. The presented analysis is also important in the tracing of the interdependencies of the parameters which characterize graphene properties. Experimental Monolayer graphene was grown by chemical vapour deposition (CVD) on a

Local stiffness and work function variations of hexagonal boron nitride on Cu(111)

• Abhishek Grewal,
• Yuqi Wang,
• Matthias Münks,
• Klaus Kern and
• Markus Ternes

Beilstein J. Nanotechnol. 2021, 12, 559–565, doi:10.3762/bjnano.12.46

• acquisition. Sample preparation: A Cu(111) single crystal (MaTeck GmbH) is cleaned via repeated cycles of Ar-ion sputtering at room temperature followed by annealing to 1020 K in an ultrahigh-vacuum preparation chamber. A partial layer of h-BN is grown by chemical vapour deposition by heating the Cu(111

Gold(I) N-heterocyclic carbene precursors for focused electron beam-induced deposition

• Cristiano Glessi,
• Aya Mahgoub,
• Cornelis W. Hagen and
• Mats Tilset

Beilstein J. Nanotechnol. 2021, 12, 257–269, doi:10.3762/bjnano.12.21

• applications from plasmonics [10] to optoelectronics [13]. Gold FEBID precursors (Figure 1) have had a similar history as other metal precursors, as the first tested compounds were taken from the existing library of gold precursors for chemical vapour deposition (CVD). The first compounds tested were gold

Mapping of integrated PIN diodes with a 3D architecture by scanning microwave impedance microscopy and dynamic spectroscopy

• Rosine Coq Germanicus,
• Peter De Wolf,
• Florent Lallemand,
• Catherine Bunel,
• Serge Bardy,
• Hugues Murray and
• Ulrike Lüders

Beilstein J. Nanotechnol. 2020, 11, 1764–1775, doi:10.3762/bjnano.11.159

• lightly doped n-type epitaxial silicon layer is, then, grown on top of the buried layer using chemical vapour deposition. The targeted epitaxial layer thickness is 7.5 µm with a resistivity of 12 Ω·cm. The anode of the diode is formed by a 30 µm diameter p+ layer, also made by the implantation and

• polysilicon layer, both deposited by low-pressure chemical vapour deposition (LPCVD). Figure 6 shows the mappings obtained on the cross section of the bottom of a deep trench, showing the ∂C/∂V phase, ∂C/∂V amplitude, sMIM-R, and sMIM-C responses. The signature of the ∂C/∂V phase (Figure 6a) clearly reveals

DFT calculations of the structure and stability of copper clusters on MoS₂

• Cara-Lena Nies and
• Michael Nolan

Beilstein J. Nanotechnol. 2020, 11, 391–406, doi:10.3762/bjnano.11.30

• enable the use of 2D materials in technology applications, processes have been developed to grow 2D materials via chemical vapour deposition (CVD) [16][17] and atomic layer deposition (ALD) [18][19]. The films prepared via thin film deposition were comparable in performance to materials obtained via

Influence of the epitaxial composition on N-face GaN KOH etch kinetics determined by ICP-OES

• Markus Tautz,
• Maren T. Kuchenbrod,
• Joachim Hertkorn,
• Robert Weinberger,
• Martin Welzel,
• Arno Pfitzner and
• David Díaz Díaz

Beilstein J. Nanotechnol. 2020, 11, 41–50, doi:10.3762/bjnano.11.4

• structure of a GaN layer stack grown by metal organic chemical vapour deposition (MOCVD) was varied in the unintentionally doped u-GaN bulk region. Different sequences of 2D and 3D grown layers led to a variation in dislocation density, which was monitored by photoluminescence microscopy (PLM) and X-ray

• the optimization of epitaxial growth to achieve the lowest possible dislocation density. Most often, GaN is produced in the LED industry by metal organic chemical vapour deposition (MOCVD) in a heteroepitaxial process on sapphire substrates [4]. The lattice parameter mismatch of ca. 13.8% between GaN

Facile synthesis of carbon nanotube-supported NiO//Fe₂O₃ for all-solid-state supercapacitors

• Shengming Zhang,
• Xuhui Wang,
• Yan Li,
• Xuemei Mu,
• Yaxiong Zhang,
• Jingwei Du,
• Guo Liu,
• Xiaohui Hua,
• Yingzhuo Sheng,
• Erqing Xie and
• Zhenxing Zhang

Beilstein J. Nanotechnol. 2019, 10, 1923–1932, doi:10.3762/bjnano.10.188

• Discussion Figure 1 shows the process of synthesizing cathode and anode, and finally, the asymmetric supercapacitor. The details can be seen in the Experimental section. Anode material CC-CNT@Fe2O3 CNTs were grown on CC by chemical vapour deposition (CVD). As shown in Figure 2a, CNTs grow homogeneously with

Growth of lithium hydride thin films from solutions: Towards solution atomic layer deposition of lithiated films

• Ivan Kundrata,
• Karol Fröhlich,
• Lubomír Vančo,
• Matej Mičušík and
• Julien Bachmann

Beilstein J. Nanotechnol. 2019, 10, 1443–1451, doi:10.3762/bjnano.10.142

• solid electrolytes. Physical vapour deposition and chemical vapour deposition can be used to deposit lithiated films. However, the issue of conformality on non-planar substrates with large surface area makes them impractical for nanobatteries the capacity of which scales with surface area. Atomic layer

Direct growth of few-layer graphene on AlN-based resonators for high-sensitivity gravimetric biosensors

• Jimena Olivares,
• Teona Mirea,
• Lorena Gordillo-Dagallier,
• Bruno Marco,
• José Miguel Escolano,
• Marta Clement and
• Enrique Iborra

Beilstein J. Nanotechnol. 2019, 10, 975–984, doi:10.3762/bjnano.10.98

• -based solidly mounted resonators (SMR) using a low-temperature chemical vapour deposition (CVD) process assisted by Ni catalysts, and its effective bio-functionalization with antibodies. The SMRs are manufactured on top of fully insulating AlN/SiO2 acoustic mirrors able to withstand the temperatures

Temperature-dependent Raman spectroscopy and sensor applications of PtSe₂ nanosheets synthesized by wet chemistry

• Mahendra S. Pawar and
• Dattatray J. Late

Beilstein J. Nanotechnol. 2019, 10, 467–474, doi:10.3762/bjnano.10.46

• onto a Si substrate and heated at 100 °C on a hot plate. After complete evaporation, the substrate was annealed in a chemical vapour deposition system at 500 °C in argon gas atmosphere for 5 h. Supporting Information File 1, Figure S1 shows the schematic of the PtSe2 nanosheet synthesis steps. Sensor

Integration of LaMnO_3+δ films on platinized silicon substrates for resistive switching applications by PI-MOCVD

• Raquel Rodriguez-Lamas,
• Dolors Pla,
• Odette Chaix-Pluchery,
• Benjamin Meunier,
• Fabrice Wilhelm,
• Andrei Rogalev,
• Laetitia Rapenne,
• Xavier Mescot,
• Quentin Rafhay,
• Hervé Roussel,
• Michel Boudard,
• Carmen Jiménez and
• Mónica Burriel

Beilstein J. Nanotechnol. 2019, 10, 389–398, doi:10.3762/bjnano.10.38

• , their integration in CMOS-compatible substrates, such as silicon wafers, requires further effort. Here the integration of LaMnO3+δ as memristive material in a metal–insulator–metal structure is presented using a silicon-based substrate and the pulsed injection metal organic chemical vapour deposition

• -based devices fabricated using optimized growth strategies. Keywords: manganite; metal organic chemical vapour deposition (MOCVD); resistive switching; thin film; valence-change memory; Introduction Resistive switching (RS) denotes the phenomena occurring in capacitor-like heterostructures (metal

• variation of the lattice constants was observed with y and z for the orthorhombic samples, while a monotonic decrease of the rhombohedral angle α was observed for the rhombohedral samples [10]. In order to grow engineered LMO films, we chose the pulsed injection metal organic chemical vapour deposition (PI

Geometrical optimisation of core–shell nanowire arrays for enhanced absorption in thin crystalline silicon heterojunction solar cells

• Robin Vismara,
• Olindo Isabella,
• Andrea Ingenito,
• Fai Tong Si and
• Miro Zeman

Beilstein J. Nanotechnol. 2019, 10, 322–331, doi:10.3762/bjnano.10.31

• from the surface. Plasma-enhanced chemical vapour deposition (PECVD) was used for growing thin-film silicon and silicon alloys layers, to implement surface passivation and front surface field. Intrinsic hydrogenated amorphous silicon (a-Si(i):H), with a thickness equivalent to 30 nm on a flat substrate

Relation between thickness, crystallite size and magnetoresistance of nanostructured La_1−xSr_xMn_yO_3±δ films for magnetic field sensors

• Rasuole Lukose,
• Valentina Plausinaitiene,
• Milita Vagner,
• Nerija Zurauskiene,
• Skirmantas Kersulis,
• Virgaudas Kubilius,
• Karolis Motiejuitis,
• Birute Knasiene,
• Voitech Stankevic,
• Zita Saltyte,
• Martynas Skapas,
• Algirdas Selskis and
• Evaldas Naujalis

Beilstein J. Nanotechnol. 2019, 10, 256–261, doi:10.3762/bjnano.10.24

• 10.3762/bjnano.10.24 Abstract In the present study the advantageous pulsed-injection metal organic chemical vapour deposition (PI-MOCVD) technique was used for the growth of nanostructured La1−xSrxMnyO3±δ (LSMO) films on ceramic Al2O3 substrates. The compositional, structural and magnetoresistive

• deposition temperature influences the magnetic properties of the films [17]. The increase of the deposition rate also results in changes in the crystallite dimensions, leading to a higher number of nucleation sites [18]. In our research, the pulsed-injection metal organic chemical vapour deposition (PI-MOCVD

Bidirectional biomimetic flow sensing with antiparallel and curved artificial hair sensors

• Claudio Abels,
• Antonio Qualtieri,
• Toni Lober,
• Alessandro Mariotti,
• Lily D. Chambers,
• Massimo De Vittorio,
• William M. Megill and
• Francesco Rizzi

Beilstein J. Nanotechnol. 2019, 10, 32–46, doi:10.3762/bjnano.10.4

• bends out of the plane upon release [37]. The resulting cantilever thickness is 2.3 μm. MEMS packaging: After wire bonding the contact pads to an integrated circuit socket adapter (W13028RC, Winslow ADAPTICs), chemical vapour deposition of parylene at room temperature is performed which adds a conformal

Intrinsic ultrasmall nanoscale silicon turns n-/p-type with SiO₂/Si₃N₄-coating

• Dirk König,
• Daniel Hiller,
• Noël Wilck,
• Birger Berghoff,
• Merlin Müller,
• Sangeeta Thakur,
• Giovanni Di Santo,
• Luca Petaccia,
• Joachim Mayer,
• Sean Smith and
• Joachim Knoch

Beilstein J. Nanotechnol. 2018, 9, 2255–2264, doi:10.3762/bjnano.9.210

• electronic DOS were calculated from MO eigenenergies, applying a Gaussian broadening of 0.2 eV. Sample preparation Samples comprising a Si3N4-embedded NWell were fabricated by plasma-enhanced chemical vapour deposition (PECVD) using SiH4+NH3+N2 for Si3N4 and SiH4+Ar for amorphous Si [24]. As substrates, n

Electrospun one-dimensional nanostructures: a new horizon for gas sensing materials

• Muhammad Imran,
• Nunzio Motta and
• Mahnaz Shafiei

Beilstein J. Nanotechnol. 2018, 9, 2128–2170, doi:10.3762/bjnano.9.202

• produced by many different approaches. For example, by use of a molten-salt method, wet (or liquid) chemistry, nanocarving, self-catalyst growth, template-assisted (or sacrificial template) synthesis, chemical vapour deposition, thermal evaporation, spray pyrolysis or electrospinning [34][35][36]. Among

Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride

• Daniel Hiller,
• Julian López-Vidrier,
• Keita Nomoto,
• Michael Wahl,
• Wolfgang Bock,
• Tomáš Chlouba,
• František Trojánek,
• Sebastian Gutsch,
• Margit Zacharias,
• Dirk König,
• Petr Malý and
• Michael Kopnarski

Beilstein J. Nanotechnol. 2018, 9, 1501–1511, doi:10.3762/bjnano.9.141

• silicon oxide matrix can be fabricated by plasma-enhanced chemical vapour deposition (PECVD). Conventionally, SiH4 and N2O are used as precursor gasses, which inevitably leads to the incorporation of ≈10 atom % nitrogen, rendering the matrix a silicon oxynitride. Alternatively, SiH4 and O2 can be used

Comparative study of antibacterial properties of polystyrene films with TiO_x and Cu nanoparticles fabricated using cluster beam technique

• Vladimir N. Popok,
• Cesarino M. Jeppesen,
• Peter Fojan,
• Anna Kuzminova,
• Jan Hanuš and
• Ondřej Kylián

Beilstein J. Nanotechnol. 2018, 9, 861–869, doi:10.3762/bjnano.9.80

• formed in a cluster source into polymer simultaneously synthesized by plasma-enhanced chemical vapour deposition, by coating the NPs with a thin overlay or by soft landing of clusters on ex situ fabricated films followed by thermal annealing facilitating the partial embedding of clusters into the polymer

Review: Electrostatically actuated nanobeam-based nanoelectromechanical switches – materials solutions and operational conditions

• Liga Jasulaneca,
• Jelena Kosmaca,
• Raimonds Meija,
• Jana Andzane and
• Donats Erts

Beilstein J. Nanotechnol. 2018, 9, 271–300, doi:10.3762/bjnano.9.29

• chemical vapour deposition (CVD)-synthesized or mechanically exfoliated graphene flakes to the desired position on the substrate, and photo- and electron-beam lithography and metal sputtering techniques for fabrication of the electrical contacts. A SiO2 sacrificial layer may be used for the release of

BN/Ag hybrid nanomaterials with petal-like surfaces as catalysts and antibacterial agents

• Konstantin L. Firestein,
• Denis V. Leybo,
• Alexander E. Steinman,
• Andrey M. Kovalskii,
• Andrei T. Matveev,
• Anton M. Manakhov,
• Irina V. Sukhorukova,
• Pavel V. Slukin,
• Nadezda K. Fursova,
• Sergey G. Ignatov,
• Dmitri V. Golberg and
• Dmitry V. Shtansky

Beilstein J. Nanotechnol. 2018, 9, 250–261, doi:10.3762/bjnano.9.27

• 10.3762/bjnano.9.27 Abstract BN/Ag hybrid nanomaterials (HNMs) and their possible applications as novel active catalysts and antibacterial agents are investigated. BN/Ag nanoparticle (NP) hybrids were fabricated using two methods: (i) chemical vapour deposition (CVD) of BN NPs in the presence of Ag

• . Keywords: antibacterial agents; BN/Ag hybrid nanomaterials; catalysts; chemical vapour deposition; nanomaterials; Introduction New hybrid nanomaterials are the key components of the next generation advanced catalysts and biomaterials. Novel and unique properties can be obtained while employing synergetic

• of these nanostructures in an amount sufficient for detailed catalytic and biological tests. Therefore, in the present work, we have synthesized BN-based HNMs using two high-throughput methods: (i) chemical vapour deposition (CVD) of BN NPs in the presence of Ag vapors; and (ii) ultraviolet (UV

Gas-sensing behaviour of ZnO/diamond nanostructures

• Marina Davydova,
• Alexandr Laposa,
• Jiri Smarhak,
• Alexander Kromka,
• Neda Neykova,
• Josef Nahlik,
• Jiri Kroutil,
• Jan Drahokoupil and
• Jan Voves

Beilstein J. Nanotechnol. 2018, 9, 22–29, doi:10.3762/bjnano.9.4

• -terminated nanocrystalline diamond (NCD) films and/or n-type ZnO nanorods (NRs) have been obtained via a facile microwave-plasma-enhanced chemical vapour deposition process or a hydrothermal growth procedure. The morphology and crystal structure of the synthesized materials was analysed with scanning

• . All designs were fabricated in-house by standard UV lithography, followed by thermal evaporation and lift-off. The diamond growth was carried out by microwave-plasma-enhanced chemical vapour deposition from a gas mixture containing 1% of CH4 in H2 at temperatures as low as 450 °C. Then, the samples